Bc635 datasheet pdf storage

The datasheet is printed for reference information only. Npn silicon af transistors high current gain high collector current 2. Bc635637639 npn epitaxial silicon transistor created date. Storage temperature v cer v ces v ceo vebo ic icp ib p c t j t stg45601004560100456080511. Npn silicon af transistors high current gain high collector current select the part name and then. A key feature of the bc635pcie is the ability to generate interrupts on the pci bus at programmable rates. Apr 06, 2019 bd datasheet, bd pdf, bd data sheet, bd manual, bd pdf, bd, datenblatt, electronics bd, alldatasheet, free, datasheet, datasheets, data sheet.

Motorola order this document semiconductor technical data by bc635 d high current transistors bc635 npn silicon bc637 bc639 collector 2 3 base 1 emitter 1 maximum ratings 2 3 bc bc bc 635 637 639 rating symbol unit case 2904, style 14 to92 to226aa collectoremitter voltage vceo 45 60 80 vdc collectorbase voltage vcbo 45 60. Bc635 datasheet, equivalent, cross reference search. Bc639 datasheet, bc639 pdf, bc639 data sheet, bc639 manual, bc639 pdf, bc639, datenblatt, electronics bc639, alldatasheet, free, datasheet, datasheets, data sheet. Bc635 datasheet pdf pinout npn silicon epitaxial planar. Silicon planar epitaxial transistors bc635, 637, 639 npn bc636, 638, 640 pnp to92 plastic package electrical characteristics ta25. Bc635 datasheet, bc635 pdf, bc635 data sheet, bc635 manual, bc635 pdf, bc635, datenblatt, electronics bc635, alldatasheet, free, datasheet, datasheets, data sheet.

This datasheet contains the design specifications for. Free devices maximum ratings rating symbol value unit collector. These interrupts can be used to synchronize applications on the host computer as well as signal specific events. Bc635 transistors datasheet pdf encapsulate transistors.

Datasheet identification product status definition advance information formative or in design this datasheet contains the design specifications for product development. Bcx54 45 v, 1 a npn medium power transistor series rev. Bc635 bc637 bc639 bc636 bc638 bc640 collector emitter voltage 45 60 80 v collector base voltage 45 60 80v emitter base voltage 5. Bc636ta pnp epitaxial silicon transistor components datasheet pdf data sheet free from datasheet data sheet search for integrated circuits ic, semiconductors and other electronic components such as resistors, capacitors, transistors and diodes. Bc635637639 npn epitaxial silicon transistor farnell. Bc637 high current npn transistors on semiconductor. Bc635637 639 npn epitaxial silicon transistor switching and amplifier applications complement to bc635638640 absolute maximum ratings t a 25 c pw5m s, duty cycle10% electrical characteristics t a 25 c characteristic symbol rating unit collector emitter voltage. Collectorbase breakdown voltage bf721 v brcbo300 v i c10a, i e0 collectoremitter breakdown voltage bf721 v brceo300 v i c1ma, i b0 emitterbase. Tstg storage temperature range soldering temperature, for 10 seconds 300 1. General description npn generalpurpose transistors in a small sot23 to236ab, very small sot323 sc70 or ultra small sot883 dfn10063 surfacemounted device smd plastic package. Formative or in design first production full production. C unless specified otherwise description symbol test condition max unit dc current gain h fe v ce2v, i c5ma v ce2v, i c150ma bc635bc636 250 bc637bc638 160 bc639bc640 160 group10 160 group16 250 v ce2v. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied.

Bc639 npn medium power transistors product specification 2001 oct. We have engaged in the electronic components industry over 10 years. Quick reference data symbol parameter conditions min typ max unit. Bc635 datasheet, bc635 pdf, bc635 pinout, equivalent, replacement npn silicon epitaxial planar transistor semtech, schematic, circuit, manual.

Storage temperature range collectorbase voltage thermal resistance junction ambient1. Bc635637639 npn epitaxial silicon transistor solo electronica. Bc639 45 60 100 v v v vceo collectoremitter voltage. May 09, 2020 bu2525af datasheet pdf buaf transistor datasheet pdf, buaf equivalent. Bc637 datasheet, equivalent, cross reference search. Symmetricoms bc635637pmc receiver module provides precision time and frequency reference to the host computer system and peripheral data acquisition systems. Toshiba fet silicon n channel mos typefor high speed, high voltage switching, alldatasheet. Dec 22, 2019 b1020 datasheet pdf storage storage proper storage until installed keep unit in a dry, temperature controlled area. Dc current gain vce 2 v 500 300 100 50 20 1 10 100 ic, collector current ma figure 3. Type number1 package pnp complement nxp jeita jedec bc6352 sot54 sc43a to92 bc636 bcp54 sot223 sc73 bcp51 bcx54 sot89 sc62 to243 bcx51 table 2. Pdf pic625 pic626 pic627 pic635 pic636 pic637 100khz transistor c635. This datasheet contains preliminary data, and supplementary data will be published at a later date.

Datasheet identification product status definition advance information formative or in. Npn silicon af transistors bc 635 datasheet catalog. Bc636638 640 pnp epitaxial silicon transistor switching and amplifier applications complement to bc635637639. The macromodel for the diamond transistor opa gives an example of thecharacteristics, while remaining simple enough to ensure fast simulations. Specifications may change in any manner without notice. Bc635 637639 npn epitaxial silicon transistor created date. Storage temperature v cer v ces v ceo v ebo ic icp ib p c t j t stg 45 60 100 45 60 100 45 60 80 5 1 1. Bc635d bc635, bc637, bc639, bc63916 high current transistors npn silicon maximum ratings rating symbol value unit collectoremitter voltage bc635 bc637 bc639 vceo 45 60 80 vdc collectorbase voltage bc635. Bc635637639 npn epitaxial silicon transistor mouser electronics. The nellcor pulse oximetry system with oximax technology establishes a new milestone in patient safety monitoring that can impact clinical settings from the everyday to the extraordinary. Switching regulator is a unique hybrid transistor circuit, specifically designed, constructed and specia, p c635 636 637 typ.

Npn silicon af transistors high current gain high collector current 3. Bc635 45 collector to base voltage bc637 60 bc639 vcbo 100 v bc635 45 collector to emitter voltage bc637 60 bc639 vceo 80 v emitter to base voltage vebo 5 v continuous collector current ic 1 a collector power dissipation pc 830 mw junction, storage temperature tj, tstg 150, 65150 c. Time is acq u ir ed f om th gps sl ng a supplied antennareceiver bc637pmc only or from time code signals, typically irig b. St bc635 bc637 bc639 npn silicon epitaxial planar transistor medium power transistors for driver. Bc635 datasheet, bc635 pdf, bc635 pinout, equivalent, replacement silicon planar epitaxial transistors cdil, schematic, circuit, manual. Data sheet pure storage flasharrayx accelerate core applications and provide a modern data experience. Motorola order this document semiconductor technical data by bc635d high current transistors bc635 npn silicon bc637 bc639 collector 2 3 base 1 emitter 1 maximum ratings 2 3 bc bc bc 635 637 639 rating symbol unit case 2904, style 14 to92 to226aa collectoremitter voltage vceo 45 60 80 vdc collectorbase voltage vcbo 45 60 80 vdc emitterbase. Bc639 npn medium power transistors 1999 apr 23 product specification supersedes data of 1997 mar 12 philips semiconductors product specification npn medium power transistors bc635. Elektronische bauelemente bc635 bc637 bc639 npn type plastic encapsulated transistor feature.

Bc337, bc33725, bc33740 amplifier transistors npn silicon features these are pb. Bc635 datasheet pdf pinout silicon planar epitaxial. Datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. Bc639 45 60 80 v v v vebo emitterbase voltage 5 v ic collector current 1 a icp peak collector current 1. Applications datasheet search, datasheets, datasheet search site for electronic components and semiconductors, integrated circuits, diodes and other semiconductors. All specifications subject to change without notice. Package dimensions bc635637639 dimensions in millimeters 2002 fairchild semiconductor corporation rev. Operating and storage junction temperature range tj, tstg. Bc847 series 45 v, 100 ma npn generalpurpose transistors rev. Semiconductor data sheets andor specifications can and do vary in different applications and actual. Bc635 bc637 bc639 pd ta 25c pd tc 25c soa 1s pd tc 25c pd ta 25c 500 200 100 50 20 1 3 5 10 30 50 100 300 500 ic, collector current ma figure 2. Bc635, bc637, bc639, bc63916 high current transistors.